Method for producing a controllable semiconductor component having trenches with different widths and depths

ABSTRACT

A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. In a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. The oxide layer is removed from the first trench completely or at least partly such that the semiconductor body has an exposed first surface area arranged in the first trench. An electrically conductive material is filled into the second trench, and the semiconductor body and the oxide layer are partially removed such that the electrically conductive material has an exposed second surface area at the bottom side.

TECHNICAL FIELD

Embodiments of the present invention relate to a method for producing acontrollable semiconductor component.

BACKGROUND

Controllable semiconductor components like MOSFETs (Metal OxideSemiconductor Field-Effect Transistors), IGBTs (Insulated Gate BipolarTransistors), J-FETs (Junction Field-Effect Transistors) etc. are widelyused as electronic switches for switching electrical loads or aselectronic switches in all types of switching converters. Manycontrollable semiconductor components include a semiconductor body witha drain region, a drift region adjoining the drain region, and a sourceregion, each having a first conductivity type, and a body regionarranged between the drift region and source region of a secondconductivity type. A gate electrode serves to control a conductingchannel in the body region between the source region and the driftregion. The source region is electrically connected to a sourceelectrode which is also connected to the body region, and the drainregion is electrically connected to a drain electrode.

In order to realize the electrical connection between the source regionand the source electrode, in many controllable semiconductor componentsthe source electrode has a protrusion that extends into a trench of thesemiconductor body where it contacts the source region. In othercontrollable semiconductor components, polycrystalline silicon isarranged in a trench of the semiconductor body and electrically contactsboth the source region and the source electrode. In both cases, therespective trench is frequently referred to as “contact trench”. Inconventional methods for producing such a controllable semiconductorcomponent, the contact trench is temporarily sealed with a protectivevarnish or with polycrystalline silicon so as to allow for theprocessing of other elements of the semiconductor component to beproduced without adversely affecting the source region or the contacttrench. However, the mentioned sealing techniques require a number ofprocess steps which on the one hand increase the production costs and onthe other hand constrains a reduction of the structure size the likecell pitch of a cell structure of the transistor etc.

Hence, there is a need for an improved method for producing acontrollable semiconductor component.

SUMMARY

One aspect relates to a method for producing a controllablesemiconductor component. In that method, a semiconductor body with a topside and a bottom side is provided. Subsequently, a first trenchprotruding from the top side into the semiconductor body and a secondtrench protruding from the top side into the semiconductor body areformed. The first trench has a first width and a first depth and thesecond trench has a second width greater than the first width and asecond depth greater than the first depth. In a common process, an oxidelayer is formed in the first trench and in the second trench such thatthe oxide layer fills the first trench and electrically insulates asurface of the second trench. By filling the first trench, the oxidelayer seals and protects the first trench so that further process stepscan be carried out without adversely affecting the first trench or thoseregions of the semiconductor body adjacent to the first trench.Optionally, the ratio between the second depth and the first depth maybe greater than 1.5.

A further aspect also relates to a method for producing a controllablesemiconductor component. To this, a semiconductor body with a top sideand a bottom side is provided. A first trench protruding from the topside into the semiconductor body, a second trench protruding from thetop side into the semiconductor body, and a third trench protruding fromthe top side into the semiconductor body are formed. The first trenchhas a first width and a first depth, the second trench a second widthand a second depth and the third trench a third width and a third depth.Both the first width and the second width are smaller than the thirdwidth, and the first depth is smaller than one or both of the seconddepth and the third depth. Optionally, the second depth may be greaterthan the first depth and smaller than the third depth. Optionally, theratio between the second depth and the first depth may be greater than1.5. Also optionally, the ratio between the third depth and the firstdepth may be greater than 1.5 and/or the ratio between the third depthand the first depth may be greater than 1.5.

Then, in a common oxide layer process, an oxide layer is formed in thefirst trench, the second and the third trench such that the oxide layerfills the first trench and the second trench and electrically insulatesa surface of the third trench. Subsequently, the oxide layer is removedcompletely or at least partly from the first trench such that thesemiconductor body has an exposed first surface area arranged in thefirst trench.

An advantage of the previously described methods is that an oxide layerforming process required anyway for the production process of thecontrollable semiconductor component may be used also for sealing atleast the first trench. That is, an extra process step for sealing thefirst trench is unnecessary.

After finishing the further process steps, the oxide layer is removedfrom the first trench completely or at least partly such that thesemiconductor body has an exposed first surface area arranged in thefirst trench. Optionally, a first electrode may be formed on the topside. Thereby, also an electrical contact between the first electrodeand the exposed first surface area may be formed.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples will now be explained with reference to the drawings. Thedrawings serve to illustrate the basic principle, so that only aspectsnecessary for understanding the basic principle are illustrated. Thedrawings are not to scale. In the drawings the same reference charactersdenote like features.

FIGS. 1-14 illustrate different steps during the production of acontrollable semiconductor component.

FIGS. 15-22 illustrate different steps during the production of afurther controllable semiconductor component.

DETAILED DESCRIPTION

FIG. 1 schematically illustrates a vertical cross sectional view of asemiconductor body 1 with a top side 18 and a bottom side 19 oppositethe top side 18. The cross sectional plane extends perpendicular to thetop side 18 and to the bottom side 19. The semiconductor body 1 mayinclude a conventional semiconductor material, such as silicon (Si),silicon carbide (SiC), gallium arsenide (GaAs), or any othersemiconductor material.

Starting from the bottom side 19, the semiconductor body 1 may includean n-doped first semiconductor region 11, an n-doped secondsemiconductor region 12, a p-doped third semiconductor region 13 and ann-doped fourth semiconductor region 14 arranged on top of one another.However, in other embodiments, the semiconductor body 1 may have adifferent structure.

In order to produce trenches in the semiconductor body 1, a mask layer61 is deposited on the top side 18 and a photoresist layer 62 isdeposited on the mask layer 61. Then, the mask layer 61 isphotolithographically structured with conventional techniques so as tohave openings. Thereby, the photo resist layer 62 is used in thephotolithography process. In a subsequent etching step, one or morefirst trenches 21 and one or more second trenches 22 are etchedunderneath the openings of the mask layer 61.

FIG. 2 illustrates the etching step. As indicated by a number ofparallel arrows, the etching method employed may be an anisotropicetching method, for instance RIE (Reactive Ion Etching). The resultingdepth of the first and second trenches 21, 22 depends on the width ofthe respective openings of the mask 61. More precisely, the depth of anetched trench increases with the width of the respective opening.

FIG. 3 illustrates the arrangement after the trench etching process.Then, as further illustrated in FIG. 4, the mask layer 61 and thephotoresist layer 62 may optionally be partly or completely removed fromthe semiconductor body 1. In other embodiments, the mask layer 61 and/orthe photoresist layer 62 may remain on the semiconductor body 1. As alsoillustrated in FIG. 4, relative to the top side 18 of the semiconductorbody 1, the first trench 21 has a first depth d21 and the secondtrenches 22 have a second depth d22 greater than the first depth d21.Optionally, the ratio d22:d21 between the second depth d22 and the firstdepth d21 may be greater than 1.5.

The completed first trench 21 protrudes from the top side 18 into thesemiconductor body 1 and has a first width w21. Accordingly, thecompleted second trenches 22 protrude from the top side 18 into thesemiconductor body 1 and have a second width w22 whereby the first widthw21 is smaller than the second width w22.

In a subsequent oxide formation process illustrated in FIG. 5, an oxidelayer 3 is formed on the top side 18 such that the oxide layer 3 isarranged in the first trench 21 and in the second trenches 22. Thereby,the oxide layer 3 fills the first trench 21 and electrically insulates asurface of the second trenches 22. As can also be seen from FIG. 5, thefirst trench 21 is completely filled with the oxide of the oxide layer3.

In principle, any know technique may be used for forming the oxide layer3. For instance, the oxide layer 3 may be formed by depositing an oxideon the semiconductor body 1, e.g. in a TEOS (Tetraethyl orthosilicate)process in which silicon dioxide is deposited. A further possibility forforming the oxide layer 3 is oxidizing a surface layer of thesemiconductor body 1. In case of a silicon semiconductor body 1, theresult is an oxide layer 3 substantially comprising of silicon dioxide.

By filling the first trench 21, the oxide layer 3 seals and protects thefirst trench 21 so that one or more subsequent process steps can becarried out without adversely affecting the first trench 21 or thoseregions of the semiconductor body 1 adjacent to the first trench 21. Byway of example, in the present embodiment the further process stepsinclude forming a gate electrode 42 in each of the one or more secondtrenches 22. Optionally, in each of the one or more second trenches 22 afield electrode 41 may be produced and sealed with a dielectric layer 51prior to forming the gate electrodes 42. The dielectric layer 51 servesto electrically insulate the gate electrode 42 to be produced from thefield electrode 41 arranged in the same second trench 22 as therespective gate electrode 21. In other embodiments, the field electrode41 and the gate electrode 42 may be electrically connected to oneanother.

After the production of the gate electrodes 42, the arrangement mayoptionally be grinded and/or chemically-mechanically polished (CMP) atthe top side 18 in order to remove excrescent parts of the fillingmaterial and/or of the oxide layer 3. The resulting structure isillustrated in FIG. 6.

Subsequently, a mask layer 63 is deposited on the top side 18 and aphotoresist layer 64 is deposited on the mask layer 63 as illustrated inFIG. 7. Then, as illustrated in FIG. 8, the mask layer 63 isphotolithographically structured with conventional techniques so thatthe mask layer 63 has an opening 65 above each first trench 21. In afollowing etching step, the oxide layer 3 is completely or at leastpartly removed from each first trench 21 such that the semiconductorbody 1 has an exposed first surface area 10 in the first trench 21. Thefirst surface area 10 allows for electrically contacting thesemiconductor body 1 inside the first trench 21. In the etching step,the structured mask layer 63 is used as an etching mask. For etching,both isotropic (e.g. wet etching) or anisotropic etching techniques maybe used. The etching may take place selective relative to thesemiconductor body 1 in order to substantially avoid removing materialof the semiconductor body 1. FIG. 9 illustrates the resulting structureafter the etching process is completed.

Then, a p-doped contact doping region 15 of the semiconductor body 1 mayoptionally be formed in the semiconductor body 1 adjacent to the surfaceof the first trench 21. That is, the p-doped contact doping region 15extends as far as the surface of the first trench 21 and has a dopantconcentration higher than a dopant concentration of the p-doped thirdsemiconductor region 13. FIG. 10 illustrates the arrangement with thecompleted p-doped contact doping region 15.

Then, the mask layer 63 and/or the photoresist layer 64 may optionallybe removed partly or completely from the top side 18. However, in otherembodiments, the mask layer 63 and/or the photoresist layer 64 mayremain on the top side 18.

Subsequently, as illustrated in FIG. 11, an electrically conductivematerial 43 is deposited over the top side 18 and thereby in the firsttrench 21 such that it mechanically and electrically contacts theexposed first surface area 10. Provided that a p-doped contact dopingregion 15 has previously been produced, the electrically conductivematerial 43 also contacts the p-doped contact doping region 15. Theelectrically conductive material 43 may consist of or include one orboth of a polycrystalline semiconductor material (e.g. polycrystallinesilicon) and a metal (e.g. aluminum, copper, titanium, tungsten).

Referring now to FIG. 12, the parts of the conductive material 43overlying the mask layer 63 may be removed partly or completely, forinstance by grinding and/or chemically-mechanically polishing (CMP).Thereby, also the mask layer 63 and/or the photoresist layer 64 may beremoved partly or completely.

Then, as illustrated in FIG. 13, a dielectric layer 52 is deposited onthe top side 18 and subsequently provided with an opening 53. Theopening 53 is arranged above the electrically conductive material 43such that the electrically conductive material 43 is exposed inside theopening 53. An electrically conductive material 71 is then deposited onthe top side 18, and which also enters the opening 53 where it contactsthe conductive material 43. The electrically conductive material 71 maybe a metal (e.g. aluminum, copper, titanium, tungsten) or a doped orundoped polycrystalline semiconductor material (e.g. polycrystallinesilicon). In the present embodiment, the electrically conductivematerial 71 forms a source contact electrode S with a protrusion 70 thatis arranged in the opening 53 where it contacts the electricallyconductive material 43 so that it is electrically connected to the firstsurface area 10, to the third semiconductor region 13, and, if provided,to the contact doping region 15.

Prior to, together with or after the deposition of the electricallyconductive material 71, an electrically conductive material 72 may bedeposited on the bottom side 19 and mechanically and electricallycontact the first semiconductor region 11. The electrically conductivematerials 71 and 72 may be identical. In the present embodiment, theelectrically conductive material 72 forms a drain contact electrode D.

In the completed component of the described embodiment, the n-dopedfirst semiconductor region 11 is a drain region, the n-doped secondsemiconductor region 12 is a drift region, the p-doped thirdsemiconductor region 13 is a body region, the n-doped fourthsemiconductor region 14 is a source region, and the p-dopedsemiconductor region 15 is a body contact region.

A further embodiment of a method for producing a controllablesemiconductor component will now be described with reference to FIGS. 15to 22. The completed component is illustrated in FIG. 22. The componentdiffers from the component described with reference to FIGS. 1 to 14 inthat the gate electrode 42 is electrically connected to a gate contactelectrode G arranged on the bottom side 19 of the semiconductor body 1.To this end, an electrically conductive via 46, e.g. a semiconductorvia, completely penetrates the semiconductor body 1 between the top side18 and the bottom side 19. At the bottom side 19, the via 46electrically contacts the gate contact electrode G. In addition, anelectrically conductive line 45 arranged on the top side 18 electricallyconnects both the gate electrode 42 and the via 46. Hence, the gateelectrode 42 is electrically connected to the gate contact electrode Gvia the conductive line 45 and the via 46.

In order to produce such a semiconductor component with the draincontact electrode 72 arranged on the bottom side 19, a semiconductorbody 1 as illustrated in and described with reference to FIG. 1 isprovided. Then, a mask layer 61 is deposited on the top side 18 and aphotoresist layer 62 is deposited on the mask layer 61 as described withreference to FIG. 2. Then, the mask layer 61 is photolithographicallystructured with conventional techniques so as to have openings. Thereby,the photo resist layer 62 is used in the photolithography process. In asubsequent etching step, one or more first trenches 21, one or moresecond trenches 22 and one or more third trenches 23 are etchedunderneath the openings of the mask layer 61. FIG. 15 illustrates theetching step. As indicated by a number of parallel arrows, the usedetching method may be an anisotropic etching method, for instance RIE(Reactive Ion Etching).

FIG. 16 illustrates the arrangement after the trench etching process andafter the optional removal of the photoresist layer 62 and of the masklayer 61. Alternatively, the mask layer 61 and the photoresist layer 62may remain on the semiconductor body 1 or be removed only partly fromthe semiconductor body 1.

The completed first trenches 21 protrude from the top side 18 into thesemiconductor body 1 and have first widths w21 and, relative to the topside 18, first depths d21. The completed second trenches 22 protrudefrom the top side 18 into the semiconductor body 1 and have secondwidths w22 and, relative to the top side 18, second depths d22, and thecompleted third trenches 23 protrude from the top side 18 into thesemiconductor body 1 and have third widths w23 and, relative to the topside 18, third depths d23. Thereby, the first width w21 is smaller thanthe third width w23. Optionally, the second width w23 may be greaterthan the first width w21 and smaller than the third width w23. Further,the first depth d21 is smaller than the third depth d23. Optionally, thesecond depth d22 may be greater than the first depth d21 and smallerthan the third depth d23. Optionally, the ratio d22:d21 between thesecond depth d22 and the first depth d21 may be greater than 1.5. Alsooptionally, the ratio d23:d21 between the third depth d23 and the firstdepth d21 may be greater than 1.5. According to a further option, theratio d23:d21 between the third depth d23 and the first depth d21 may begreater than 1.5.

In a subsequent oxide formation process illustrated in FIG. 17, an oxidelayer 3 is formed on the top side 18 such that the oxide layer 3 isarranged in the first trenches 21, in the second trenches 22 and in thethird trenches 23. Thereby, the oxide layer 3 fills the first trench 21and electrically insulates a surface of the third trenches 23. Thereby,the oxide layer 3 may either fill—as illustrated in FIG. 17—the secondtrenches 22, or only insulate the surface of the second trenches 22 inthe same manner as described above with reference to the second trenches22 illustrated in FIG. 5.

In principle, any known technique may be used for forming the oxidelayer 3. For instance, the oxide layer 3 may be formed by depositing anoxide on the semiconductor body 1, e.g. in a TEOS (Tetraethylorthosilicate) process in which silicon dioxide is deposited. A furtherpossibility for forming the oxide layer 3 is oxidizing a surface layerof the semiconductor body 1. In case of a silicon semiconductor body 1,the result is an oxide layer 3 substantially comprising of silicondioxide.

By filling the first trenches 21 and, optionally, the second trenches22, the oxide layer 3 seals and protects the first trench 21 and, if thesecond trenches 22 are also filled with the oxide layer 3, the secondtrenches 22, so that one or more subsequent process steps can be carriedout without adversely affecting the first trenches 21 or the regions ofthe semiconductor body 1 adjacent to the first trenches 21, and, if thesecond trenches 22 are also filled with the oxide layer 3, withoutadversely affecting the second trenches 22 or the regions of thesemiconductor body 1 adjacent to the second trenches 22.

By way of example, in the present embodiment the further process stepsinclude filling the third trenches 23 with an electrically conductivematerial 44, for instance a doped or undoped semiconductor material(e.g. polycrystalline silicon) or a metal (e.g. aluminum, copper,titanium, tungsten). The resulting structure is illustrated in FIG. 18.In alternative embodiments in which the second trenches 22 are notcompletely filled with the oxide layer 3, the electrically conductivematerial 44 may also be filled into the second trenches 22, for instancefor forming common gate and source electrodes in the second trenches 22.However, in the illustrated embodiment, the first and second trenches21, 22 remain filled with and protected by the oxide layer 3.

Subsequently, the oxide layer 3 may be partly removed from each of theone or more second trenches 22 in order to allow for the formation ofgate electrodes 42 inside the second trenches 22. Optionally, in each ofthe second trenches 22, a field electrode 41 and the optional dielectriclayer 51 may be produced prior to forming the gate electrodes 42.

Also subsequent to filling the third trenches 23 with the electricallyconductive material 44, the oxide layer 3 may be removed from each ofthe one or more first trenches 21 and an electrically conductivematerial 43 may be deposited in the first trenches 21. Thereby, theelectrically conductive material 43 contacts exposed first surface areas10 inside the first trenches 21 as already described with reference toFIGS. 9 to 11. Removing the oxide layer 3 from the first trenches 21 maytake place using a photolithographically mask layer 63 provided withopenings 65 above each of the first trenches 21 as already describedwith reference to FIGS. 7 to 9.

Provided that p-doped contact doping regions 15 have previously beenproduced, the electrically conductive material 43 also contacts thep-doped contact doping regions 15 inside the first trenches 21. Theelectrically conductive material 43 may consist of or include one orboth of a polycrystalline semiconductor material (e.g. polycrystallinesilicon) or a metal (e.g. aluminum, copper, titanium, tungsten). Theresulting structure is illustrated in FIG. 19.

Subsequently, a dielectric layer 52 is deposited on the top side 18 andprovided with openings above the second trenches 22 and above at leastone third trench 23 such that gate electrodes 42 and the electricallyconductive material 44 in at least one of the third trenches 23 areexposed. Then, an electrically conductive line 45 electricallyconnecting the exposed gate electrodes 42 and the exposed electricallyconductive material 44 is produced. The electrically conductive line 45may be made of doped or undoped polycrystalline semiconductor material(e.g. polycrystalline silicon) or of metal (e.g. aluminum, copper,titanium, tungsten). Alternatively, the electrically conductive line 45may be formed from the electrically conductive material that forms thegate electrodes 42. In this case, the electrically conductive materialis deposited on the top side 18 such, that the gate electrodes 42 areproduced and that it overlays the top side 18. Then, the overlayingparts of the electrically conductive material are structured such thatgate electrodes 42 and the electrically conductive line 45 remain.

Then, the electrically conductive line 45 is electrically insulated witha further dielectric layer 54, and an electrically conductive material71 is deposited on the top side 18. Prior to depositing the electricallyconductive material 71, the dielectric layer 52 is provided with anopening 53 above each of the first trenches 21. This allows for thedeposited electrically conductive material 71 to enter the openings 53and to electrically and mechanically contact the conductive material 43.The electrically conductive material 71 may be a doped or undopedpolycrystalline semiconductor material (e.g. polycrystalline silicon) ora metal (e.g. aluminum, copper, titanium, tungsten). In the presentembodiment, the electrically conductive material 71 forms a sourcecontact electrode S with a protrusion 70 that is arranged in theopenings 53 where it contacts the electrically conductive material 43 sothat it is electrically connected to the first surface area 10, to thethird semiconductor region 13, and, if provided, to the contact dopingregions 15. The resulting structure is illustrated in FIG. 20.

As the component described with reference to FIG. 22 requires the via 46to electrically contact the gate contact electrode G still to beproduced, the arrangement is grinded and/or chemically-mechanicallypolished (CMP) at the bottom side 19 in order to expose the electricallyconductive material 44 of the via 46 at the bottom side 19. Theresulting structure is illustrated in FIG. 21 with an exposed surfacearea 460 of the electrically conductive material 44.

Prior to, together with or after the deposition of the electricallyconductive material 71 on the top side 18, an electrically conductivematerial 72 may be deposited on the bottom side 19 and mechanically andelectrically contact the first semiconductor region 11 and/or theelectrically conductive material 44. The electrically conductivematerial 72 may include two sections electrically insulated from oneanother: the drain contact electrode D mechanically and electricallycontacting the first semiconductor region 11; and the gate contactelectrode G mechanically and electrically contacting the exposed surfacearea 460.

Prior to depositing the electrically conductive material 72, structureddielectric layers 55 and 56 may optionally be produced on the bottomside 19 in order to electrically insulate in particular the draincontact electrode D against the gate contact electrode G.

In the completed component of the described embodiment, the n-dopedfirst semiconductor region 11 is a drain region, the n-doped secondsemiconductor region 12 is a drift region, the p-doped thirdsemiconductor region 13 is a body region, the n-doped fourthsemiconductor region 14 is a source region, and the p-dopedsemiconductor region 15 is a body contact region.

In all embodiments of the invention relating to a controllablesemiconductor switch, the doping concentrations of the firstsemiconductor region 11 and the fourth semiconductor region 14 may be,for instance, in a range of between 10¹⁹ cm⁻³ and 10²¹ cm⁻³. The dopingconcentration of the drift region 12 may be, for instance, in a range ofbetween 10¹³ cm⁻³ and 2·10¹⁷ cm⁻³, and the doping concentration of thebody region 13 may be, for instance, in a range of between 10¹⁶ cm⁻³ and10¹⁸ cm⁻³.

In the embodiments described above, the components are MOSFETs. However,the explained principles also apply to other components. An example forsuch a component is an IGBT which differs from a MOSFET only in that thefirst semiconductor region 11 of the IGBT has a doping complementary tothe doping of the first semiconductor region 11 of a MOSFET, that is,“p” instead of “n” in case of n-channel components and “n” instead of“p” in case of p-channel components. As commonly known in the art, thenomenclature between MOSFETs and IGBTs differs in that the drain region11 and the source region 14 of a MOSFET correspond to a collector region11 and an emitter region 14, respectively, of an IGBT. Accordingly, thedrain contact electrode D and the source contact electrode S of a MOSFETcorrespond to a collector contact electrode C and an emitter contactelectrode E, respectively, of an IGBT. Insofar there is a differencebetween the MOSFETs described in the drawings and a corresponding IGBT,the reference signs valid for the IGBTs are supplementary shown inparenthesis.

Instead of the described (vertical) n-channel components, also(vertical) p-channel components may be produced in the same manner. Tothis, the doping of the first, second, third and fourth semiconductorregions 11, 12, 13, 14 and of the contact doping region 15 should beinverted, that is, an n-doping is to be replaced by a p-doping and ap-doping is to be replaced by an n-doping.

Although various exemplary embodiments of the invention have beendisclosed, it will be apparent to those skilled in the art that variouschanges and modifications can be made which will achieve some of theadvantages of the invention without departing from the spirit and scopeof the invention. It will be obvious to those reasonably skilled in theart that other components performing the same functions may be suitablysubstituted. It should be mentioned that features explained withreference to a specific figure may be combined with features of otherfigures, even in those cases in which this has not explicitly beenmentioned.

Expressions like “subsequently”, “then”, “following” etc. used in theabove specification are only intended to express that a certain step iscarried out later than a previous step. Nevertheless, one or moreadditional steps may be carried out after the previous step and prior tothe certain step.

What is claimed is:
 1. A method for producing a controllablesemiconductor component, the method comprising: providing asemiconductor body with a top side and a bottom side; forming a firsttrench protruding from the top side into the semiconductor body and asecond trench protruding from the top side into the semiconductor body,the first trench comprising a first width and a first depth, and thesecond trench comprising a second width greater than the first width anda second depth greater than the first depth; forming, in a commonprocess, an oxide layer in the first trench and in the second trenchsuch that the oxide layer fills the first trench and electricallyinsulates a surface of the second trench; removing the oxide layer fromthe first trench completely or at least partly such that thesemiconductor body comprises an exposed first surface area arranged inthe first trench; filling an electrically conductive material into thesecond trench; and partially removing the semiconductor body and theoxide layer such that the electrically conductive material comprises anexposed second surface area at the bottom side.
 2. The method of claim1, wherein the second trench is not completely filled with the oxidelayer in the common process of forming the oxide layer in the firsttrench and in the second trench, and wherein a first electrode is formedon the top side, the first electrode electrically connected to theexposed first surface area.
 3. The method of claim 2, wherein the firstelectrode comprises a protrusion arranged in the first trench and thatcontacts the exposed first surface area.
 4. The method of claim 1,wherein the common process for forming the oxide layer is one of: adeposition process in which an oxide is deposited on the semiconductorbody; or an oxidation process in which a surface layer of thesemiconductor body is oxidized.
 5. The method of claim 1, wherein theexposed first surface area is formed by a source region.
 6. The methodof claim 1, further comprising: forming a gate electrode in the secondtrench such that the oxide layer electrically insulates the gateelectrode from the semiconductor body.
 7. The method of claim 6, whereinthe gate electrode comprises at least one of metal and dopedpolycrystalline semiconductor material.
 8. The method of claim 6,further comprising: forming a field electrode in the second trench priorto forming the gate electrode.
 9. The method of claim 8, wherein thefield electrode comprises at least one of metal and dopedpolycrystalline semiconductor material.
 10. The method of claim 1,wherein: the semiconductor body comprises an n-doped drain region, ann-doped drift region, a p-doped body region and an n-doped or p-dopedsource region arranged on top of one another; and the first trenchextends through the source region into the body region.
 11. The methodof claim 10, further comprising: forming a second electrode contactingthe drain region on the bottom side.
 12. The method of claim 10,wherein: the second trench extends through the source region, the bodyregion and the drift region and protrudes into the drain region.
 13. Themethod of claim 10, wherein: partially removing the semiconductor bodycomprises partially removing the drain region.
 14. The method of claim1, further comprising: forming an electrode on the bottom side which iselectrically connected to the exposed second surface area.